unisonic technologies co., ltd 2n60zl power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2012 unisonic technologies co., ltd qw-r502-830.a 2a, 600v n-channel power mosfet ? description the utc 2n60zl is a high voltage mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resi stance and have a high rugged avalanche characteristics. this power mosfet is usually used at high speed switching applications in power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. ? features * r ds(on) = 5 ? @ v gs = 10v * ultra low gate charge (typical 9.0nc) * low reverse transfer capacitance (c rss = typical 5.0 pf) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 2.drain 3.source 1.gate ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2N60ZLL-TM3-T 2n60zlg-tm3-t to-251 g d s tube 2n60zll-tn3-r 2n60zlg-tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source
2n60zl power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-830.a ? absolute maximum ratings ( t c = 25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 600 v gate-source voltage v gss 20 v avalanche current (note 2) i ar 2.0 a drain current continuous i d 2.0 a pulsed (note 2) i dm 8.0 a avalanche energy single pulsed (note 3) e as 140 mj repetitive (note 2) e ar 4.5 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation to-251/to-252 p d 44 w junction temperature t j +150 ambient operating temperature t opr -55 ~ +150 storage temperature t stg -55 ~ +150 notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limited by t j 3. l=64mh, i as =2.0a, v dd =50v, r g =25 ? , starting t j = 25c 4. i sd 2.4a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient to-251/to-252 ja 100 /w junction to case to-251/to-252 jc 2.87 /w
2n60zl power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-830.a ? electrical characteristics (t j =25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 600 v drain-source leakage current i dss v ds = 600v, v gs = 0v 10 a gate-source leakage current forward i gss v gs = 20v, v ds = 0v 5 a reverse v gs = -20v, v ds = 0v -5 a breakdown voltage temperature coefficient bv dss /t j i d =250 a, referenced to 25c 0.4 v/ on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs = 10v, i d =1a 4.2 5 ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f =1mhz 270 350 pf output capacitance c oss 40 50 pf reverse transfer capacitance c rss 5 7 pf switching characteristics turn-on delay time t d ( on ) v dd =300v, i d =2.4a, r g =25 ? (note 1, 2) 10 30 ns turn-on rise time t r 25 60 ns turn-off delay time t d ( off ) 20 50 ns turn-off fall time t f 25 60 ns total gate charge q g v ds =480v, v gs =10v, i d =2.4a (note 1, 2) 9.0 11 nc gate-source charge q gs 1.6 nc gate-drain charge q gd 4.3 nc drain-source diode characteristics drain-source diode forward voltage v sd v gs = 0 v, i sd = 2.0 a 1.4 v continuous drain-source current i sd 2.0 a pulsed drain-source current i sm 8.0 a reverse recovery time t rr v gs = 0 v, i sd = 2.4a, di/dt = 100 a/ s (note1) 180 ns reverse recovery charge q rr 0.72 c notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
2n60zl power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-830.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
2n60zl power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-830.a ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
2n60zl power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-830.a ? typical characteristics drain current vs. drain-source breakdown voltage drain current, i d (a) drain-source breakdown voltage, bv dss (v) 1 0 drain current vs. gate threshold voltage drain current, i d (a) gate threshold voltage, v th (v) 2 3 5 4 0 50 100 150 200 250 300 0 200 600 800 100 0 50 100 150 200 250 300 400 drain current, i d (a) drain current, i d (a) utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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